Hall Effect Measurement System

DX-300 Automatic Hall Effect Test System

Automated Hall effect test system combining an electromagnet, precision electrical instrumentation and micro‑probe station for transport measurements on semiconductor wafers and devices.

The DX-300 automatic Hall effect test system integrates a variable‑field electromagnet, power supply, high‑precision constant current source, high‑resolution voltmeter and source meter with a matrix card, Hall sample holder, three‑dimensional micro‑probe station, television microscope and dedicated system software. This architecture allows automated probing of samples and accurate measurement of Hall effect and resistivity parameters.

Measurement software automatically calculates bulk and sheet carrier concentration, mobility, resistivity, Hall coefficient and magnetoresistance, and can generate I–V and related curves. The system is suited for wafer‑level characterisation and device‑focused R&D where repeatability, automation and reduced manual wiring are essential.

Key Features

  • Automated Hall effect and resistivity measurement with software‑driven parameter calculation.
  • Integrated electromagnet, constant current source, voltmeter, source meter and matrix card for flexible test configurations.
  • Three‑dimensional micro‑probe station and television microscope for precise contact positioning on wafers and devices.
  • Measurement of bulk and sheet carrier concentration, Hall coefficient, mobility, resistivity and magnetoresistance.
  • Variable electromagnet providing up to ~1 T Hall test field at 20 mm pole spacing with defined uniformity.
  • Automated I–V and related curve acquisition with data export for further analysis.
  • Suitable for semiconductor, low‑resistance and high‑resistance materials as well as P‑type and N‑type characterisation.
  • System supplied with standard Hall reference samples and ohmic contact kit.

Technical Specifications

SpecificationValue
Measurement Parameters
Carrier concentration10³ cm⁻³ – 10²³ cm⁻³
Mobility0.1 – 10⁸ cm²/V·s
Resistivity range10⁻⁵ – 10⁷ Ω·cm
Resistance rangeMaterial‑dependent
Hall voltage0.01 µV – ±3 V
Hall coefficient10⁻⁵ – 10²⁷ cm³/C
Test methodVan der Pauw / Hall bar arrangements depending on fixture
RepeatabilityTypical repeatability better than ~3% over three measurements
Magnetic Field Environment
Magnet typeVariable‑field electromagnet (vertical field)
Typical magnetic field strengths1070 mT @ 20 mm, 678 mT @ 30 mm, 500 mT @ 40 mm, 378 mT @ 50 mm, 293 mT @ 60 mm
Hall test field≥ 1 T at 20 mm pole spacing (typical Hall test condition)
Uniformity≈ 1% over defined area
Field stabilityTypical 24‑hour stability better than ~0.3 G at 5000 G
Electrical System
Current source range50 nA – 50 mA, resolution ~0.0001 µA
Measuring voltage range0 – ±3 V, resolution ~0.0001 mV
Physical / Mechanical
Maximum sample sizeUp to 6‑inch wafers (depending on fixture)
Cabinet dimensionsApprox. 600 × 600 × 1000 mm (electronics cabinet)

Applications

  • Wafer‑level transport characterisation for semiconductor research and device development.
  • Hall coefficient, carrier concentration and mobility evaluation under variable magnetic fields.
  • Comparative studies of low‑ and high‑resistance materials and P‑/N‑type structures.
  • Teaching and research laboratories requiring automated, probe‑based Hall measurements.

DX-300 System Configuration (Summary)

  • DXSBV‑100 vertical‑field electromagnet and matching high‑precision supply.
  • DX‑320 Hall measurement module with constant current source and switching.
  • High‑precision gauss meter with probe and bracket.
  • Three‑dimensional micro‑motion probe platform with tungsten pressure needles.
  • Television microscope and HD camera for contact visualisation.
  • Electronics cabinet, PC, software, manuals, reference samples and ohmic contact kit.