Functional Material Measurement
Atomic Force Microscope
The wafer-level Atomic Force Microscope uses a micro-cantilever probe structure to characterise the three-dimensional surface morphology of solid materials such as conductors, semiconductors and insulators, with support for large wafer-level samples.
The electric sample positioning stage combined with optical imaging can achieve positioning accuracy of 1 µm within a 300 × 300 mm area. Probe approach and scanning parameter adjustments are fully automated, and imaging resolution can reach 20 picometers, enabling ultra-high precision surface characterisation.
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Product Overview
The wafer-level Atomic Force Microscope uses a micro-cantilever probe structure to characterise the three-dimensional surface morphology of solid materials such as conductors, semiconductors and insulators. The system supports testing of large wafer-level samples, providing high-resolution, non-destructive analysis of critical device surfaces.
The electric sample positioning stage combined with optical imaging achieves positioning accuracy of 1 µm within a 300 × 300 mm area, simplifying region-of-interest selection across large wafers. Probe approach and scanning parameter adjustments are fully automated, improving ease of use and repeatability.
With an imaging resolution down to 20 picometers, the system enables ultra-high precision surface characterisation for advanced materials research and process control.
Features
- Advanced measurement functions including Young's modulus, adhesion, magnetic domain, surface potential and work function analysis.
- Compatible with accessories such as culture dishes and heating stages, allowing measurements in underwater or high-temperature environments.
- Intelligent probe insertion system enabling one-click automated probe insertion using a piezoelectric scanning tube.
- Supports large wafer measurements including 12-inch wafers and is backward compatible with 8-inch, 6-inch, 4-inch wafers and smaller samples.
Technical Indicators
| Noise level (XY direction) | 0.2 nm closed loop, 0.02 nm open loop |
| Noise level (Z direction) | 0.06 nm closed loop, 0.03 nm open loop |
| Nonlinearity | 0.15% in XY direction, 1% in Z direction |
| Scanning mode | XYZ full probe scanning mode (sample remains stationary) |
| Scanning range | 90 μm × 90 μm × 9 μm |
| Scanning rate | 0.1 Hz – 30 Hz |
| Image sampling points | 32 × 32 – 4000 × 4000 |
| Sample size | 12-inch wafer compatible with 8, 6, 4-inch wafers and fragment samples |
| Working mode | Contact, tapping, non-contact |
| Adaptive environment | Air and liquid phase environments |
Multi-functional Measurement Modes
- Electrostatic Force Microscope (EFM)
- Scanning Kelvin Probe Microscope (KPFM)
- Piezoelectric Force Microscope (PFM)
- Conductive Atomic Force Microscope (C-AFM)
- Scanning Capacitive Force Microscope (SCFM)
- Magnetic Force Microscope (MFM)
- Lateral Force Microscope (LFM)
- Nano-etching / nano-processing
- Single-point force spectrum curve measurement
- Force modulation mode
Optional Features
- Fully automatic wafer loading and unloading system.
- Fully automatic probe approach system with 35 mm stroke and 50 nm step accuracy.